IndiumV3, Main, Repository, bibRecord, 001503

Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE

Identifieur interne : 001503 ( Main/Repository ); précédent : 001502; suivant : 001504

Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE

Auteurs : RBID : Pascal:12-0054380

Descripteurs français

Pascal (Inist)
- Superréseau, Epitaxie jet moléculaire, Echelle nanométrique, Autoassemblage, Microscopie électronique transmission, Nucléation, Facettage, Dislocation filetée, Fluctuation, Microscopie électronique, Composé ternaire, Nitrure de gallium, Nitrure d'indium, Composé binaire, Point quantique, Nanostructure, Couche autoassemblée, Matériau cristallin, Indium, Fabrication microélectronique, 8107T, 8535B, 6146, 6865, InGaN, GaN, 8116D, 6460Q, 8540H, Méthode template.

English descriptors

KwdEn :
- Binary compounds, Crystalline material, Electron microscopy, Faceting, Fluctuations, Gallium nitride, Indium, Indium nitride, Microelectronic fabrication, Molecular beam epitaxy, Nanometer scale, Nanostructures, Nucleation, Quantum dots, Self-assembled layers, Self-assembly, Superlattices, Template method, Ternary compounds, Threading dislocation, Transmission electron microscopy.

Abstract

The nanoscale properties of self-assembled semipolar InGaN/GaN quantum dot (QD) superlattices, grown by plasma-assisted molecular beam epitaxy (PAMBE) on (1122) GaN template, were investigated by transmission electron microscopy (TEM) techniques. Preferential QD nucleation on crystal planes inclined at small angles relative to the (1122) plane was observed. Nominal (1122) QDs were lenticular-shaped but the QD size and faceting increased when nucleation occurred on the inclined planes. Strain and interaction with the threading dislocations introduced fluctuations in the indium concentration. Lattice strain analysis along the growth direction was correlated to the average indium content.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002336

Links to Exploration step

Pascal:12-0054380

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE</title>
<author><name sortKey="Lotsari, A" uniqKey="Lotsari A">A. Lotsari</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Dimitrakopulos, G P" uniqKey="Dimitrakopulos G">G. P. Dimitrakopulos</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kehagias, Th" uniqKey="Kehagias T">Th. Kehagias</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Das, A" uniqKey="Das A">A. Das</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CEA-CNRS Group "NanoPhysique et SemiConducteurs," INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1>
<s2>38054 Grenoble</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Grenoble</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Monroy, E" uniqKey="Monroy E">E. Monroy</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CEA-CNRS Group "NanoPhysique et SemiConducteurs," INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1>
<s2>38054 Grenoble</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Rhône-Alpes</region>
<settlement type="city">Grenoble</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Komninou, Ph" uniqKey="Komninou P">Ph. Komninou</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>54124 Thessaloniki</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0054380</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0054380 INIST</idno>
<idno type="RBID">Pascal:12-0054380</idno>
<idno type="wicri:Area/Main/Corpus">002336</idno>
<idno type="wicri:Area/Main/Repository">001503</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0167-9317</idno>
<title level="j" type="abbreviated">Microelectron. eng.</title>
<title level="j" type="main">Microelectronic engineering</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Crystalline material</term>
<term>Electron microscopy</term>
<term>Faceting</term>
<term>Fluctuations</term>
<term>Gallium nitride</term>
<term>Indium</term>
<term>Indium nitride</term>
<term>Microelectronic fabrication</term>
<term>Molecular beam epitaxy</term>
<term>Nanometer scale</term>
<term>Nanostructures</term>
<term>Nucleation</term>
<term>Quantum dots</term>
<term>Self-assembled layers</term>
<term>Self-assembly</term>
<term>Superlattices</term>
<term>Template method</term>
<term>Ternary compounds</term>
<term>Threading dislocation</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Superréseau</term>
<term>Epitaxie jet moléculaire</term>
<term>Echelle nanométrique</term>
<term>Autoassemblage</term>
<term>Microscopie électronique transmission</term>
<term>Nucléation</term>
<term>Facettage</term>
<term>Dislocation filetée</term>
<term>Fluctuation</term>
<term>Microscopie électronique</term>
<term>Composé ternaire</term>
<term>Nitrure de gallium</term>
<term>Nitrure d'indium</term>
<term>Composé binaire</term>
<term>Point quantique</term>
<term>Nanostructure</term>
<term>Couche autoassemblée</term>
<term>Matériau cristallin</term>
<term>Indium</term>
<term>Fabrication microélectronique</term>
<term>8107T</term>
<term>8535B</term>
<term>6146</term>
<term>6865</term>
<term>InGaN</term>
<term>GaN</term>
<term>8116D</term>
<term>6460Q</term>
<term>8540H</term>
<term>Méthode template</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The nanoscale properties of self-assembled semipolar InGaN/GaN quantum dot (QD) superlattices, grown by plasma-assisted molecular beam epitaxy (PAMBE) on (1122) GaN template, were investigated by transmission electron microscopy (TEM) techniques. Preferential QD nucleation on crystal planes inclined at small angles relative to the (1122) plane was observed. Nominal (1122) QDs were lenticular-shaped but the QD size and faceting increased when nucleation occurred on the inclined planes. Strain and interaction with the threading dislocations introduced fluctuations in the indium concentration. Lattice strain analysis along the growth direction was correlated to the average indium content.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0>
</fA01>
<fA02 i1="01"><s0>MIENEF</s0>
</fA02>
<fA03 i2="1"><s0>Microelectron. eng.</s0>
</fA03>
<fA05><s2>90</s2>
</fA05>
<fA06><s2>Feb</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Micro&Nano 2010: 4th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs December 12-15, 2010, NCSR Demokritos, Athens, Greece</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>LOTSARI (A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DIMITRAKOPULOS (G. P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KEHAGIAS (Th.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>DAS (A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MONROY (E.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KOMNINOU (Ph.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>NASSIOPOULOU (Androula G.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Physics Department, Aristotle University of Thessaloniki</s1>
<s2>54124 Thessaloniki</s2>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>CEA-CNRS Group "NanoPhysique et SemiConducteurs," INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1>
<s2>38054 Grenoble</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>NCSR Demokritos, Institute of Microelectronics (IMEL)</s1>
<s3>GRC</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA20><s1>108-111</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>20003</s2>
<s5>354000506062850290</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>19 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0054380</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The nanoscale properties of self-assembled semipolar InGaN/GaN quantum dot (QD) superlattices, grown by plasma-assisted molecular beam epitaxy (PAMBE) on (1122) GaN template, were investigated by transmission electron microscopy (TEM) techniques. Preferential QD nucleation on crystal planes inclined at small angles relative to the (1122) plane was observed. Nominal (1122) QDs were lenticular-shaped but the QD size and faceting increased when nucleation occurred on the inclined planes. Strain and interaction with the threading dislocations introduced fluctuations in the indium concentration. Lattice strain analysis along the growth direction was correlated to the average indium content.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F02</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A16D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Superréseau</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Superlattices</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Echelle nanométrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Nanometer scale</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Autoassemblage</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Self-assembly</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Nucléation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Nucleation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Facettage</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Faceting</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Facetage</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Dislocation filetée</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Threading dislocation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Dislocación aterrajada</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Fluctuation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Fluctuations</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Microscopie électronique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Electron microscopy</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>22</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>23</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>24</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>25</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>26</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>27</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Couche autoassemblée</s0>
<s5>28</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Self-assembled layers</s0>
<s5>28</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Matériau cristallin</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Crystalline material</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Material cristalino</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>46</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>46</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>46</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>8535B</s0>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>6146</s0>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>6865</s0>
<s4>INC</s4>
<s5>59</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>8116D</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>6460Q</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>8540H</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>Méthode template</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="30" i2="3" l="ENG"><s0>Template method</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>11</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>11</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>11</s5>
</fC07>
<fN21><s1>037</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Micro&Nano 2010 International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs</s1>
<s2>4</s2>
<s3>Athens GRC</s3>
<s4>2010-12-12</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001503 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 001503 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:12-0054380
   |texte=   Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE

Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri